Mechanisms of magnetoresistance in variable-range-hopping transport for two-dimensional electron systems

URN to cite this document:: urn:nbn:de:bvb:355-epub-188277
DOI to cite this document:: 10.5283/epub.18827

Raikh, M. E. ; Czingon, J. ; Ye, Qiu-yi ; Koch, F. ; Schoepe, Wilfried ; Ploog, K.

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Date of publication of this fulltext: 20 Dec 2010 14:14

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Abstract

The temperature and magnetic-field dependencies of hopping transport in dilutely doped δ layers have been measured under the conditions for which the variable-range mechanism applies. We trace the transition from negative magnetoresistance in low fields to positive magnetoresistance in high fields. In the range of intermediate fields, the resistance in the perpendicular orientation appears to be ...