Theoretical study of interacting hole gas in p-doped bulk III-V semiconductors

URN zum Zitieren dieses Dokuments:: urn:nbn:de:bvb:355-epub-242948
DOI zum Zitieren dieses Dokuments:: 10.5283/epub.24294

Schliemann, John

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Veröffentlichungsdatum dieses Volltextes: 11 Mai 2012 09:38

Alternative Links zum Volltext:DOI Verlag

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Zusammenfassung

We study the homogeneous interacting hole gas in p-doped bulk III-V semiconductors. The structure of the valence band is modeled by Luttinger's Hamiltonian in the spherical approximation, giving rise to heavy and light hole dispersion branches, and the Coulomb repulsion is taken into account via a self-consistent Hartree-Fock treatment. As a nontrivial feature of the model, the self-consistent ...