Helicity sensitive terahertz radiation detection by field effect transistors

URN to cite this document:: urn:nbn:de:bvb:355-epub-252991
DOI to cite this document:: 10.5283/epub.25299

Drexler, Christoph ; Dyakonova, Nina ; Olbrich, Peter ; Karch, Johannes ; Schafberger, Michael ; Karpierz, K. ; Mityagin, Yu ; Lifshits, M. B. ; Teppe, F. ; Klimenko, O. ; Meziani, Y. M. ; Knap, W. ; Ganichev, Sergey

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Date of publication of this fulltext: 09 Jul 2012 14:43

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Abstract

Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the field-effect-transistors (generalized Dyakonov-Shur model). The observed helicity dependent photoresponse is by several orders of magnitude higher than any earlier reported one. ...