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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-26074
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.2607
Alternative Links zum Volltext:DOI
Zusammenfassung
Mapping of the strain distribution in uncoalesced pendeoepitaxial GaN on SiC by spatially resolved micro-Raman and microphotoluminescence, and lattice constants measured by high-resolution x-ray diffraction provide a consistent picture of relaxation of inhomogeneous and anisotropic strain. The pendeoepitaxial wings show a nearly complete strain relaxation and high optical quality with extremely ...
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