| PDF (527kB) |
- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-268613
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.26861
Zusammenfassung
We report on measurements of direct spin Hall effect in a lightly n-doped GaAs channel with conductivity below 2000 Ω−1 m−1. As spin detecting contacts, we employed highly efficient ferromagnetic Fe/(Ga,Mn)As/GaAs Esaki diode structures. We investigate bias and temperature dependence of the measured spin Hall signal and evaluate the value of total spin Hall conductivity and its dependence on ...
![plus plus](/style/images/plus.png)
Nur für Besitzer und Autoren: Kontrollseite des Eintrags