Zusammenfassung
We report on the charge carrier dynamics of superconducting titanium nitride (TiN) in the frequency range 90–510 GHz (3–17 cm−1). The experiments were performed on an 18-nm thick TiN film with a critical temperature of Tc=3.4 K. Measurements were carried out from room temperature down to 2 K, and in magnetic fields up to B=7 T. We extract the real and imaginary parts of the complex conductivity ...
Zusammenfassung
We report on the charge carrier dynamics of superconducting titanium nitride (TiN) in the frequency range 90–510 GHz (3–17 cm−1). The experiments were performed on an 18-nm thick TiN film with a critical temperature of Tc=3.4 K. Measurements were carried out from room temperature down to 2 K, and in magnetic fields up to B=7 T. We extract the real and imaginary parts of the complex conductivity σ̂ as a function of frequency and temperature, directly providing the superconducting energy gap 2Δ. Further analysis yields the superconducting London penetration depth λL. The findings as well as the normal-state properties strongly suggest conventional BCS superconductivity, underlined by the ratio 2Δ(0)/kBTc=3.44. Detailed analysis of the charge carrier dynamics of the silicon substrate is also discussed.
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