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Nonballistic Spin-Field-Effect Transistor

URN to cite this document:
urn:nbn:de:bvb:355-epub-282397
DOI to cite this document:
10.5283/epub.28239
Schliemann, John ; Egues, J. Carlos ; Loss, Daniel
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Date of publication of this fulltext: 22 May 2013 13:52


Abstract

We propose a spin-field-effect transistor based on spin-orbit coupling of both the Rashba and the Dresselhaus types. Different from earlier proposals, spin transport through our device is tolerant against spin-independent scattering processes. Hence the requirement of strictly ballistic transport can be relaxed. This follows from a unique interplay between the Dresselhaus and the Rashba coupling; ...

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