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Nonballistic Spin-Field-Effect Transistor

Schliemann, John, Egues, J. Carlos and Loss, Daniel (2003) Nonballistic Spin-Field-Effect Transistor. Phys. Rev. Lett. 90, p. 146801.

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Date of publication of this fulltext: 22 May 2013 13:52

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Other URL: http://link.aps.org/doi/10.1103/PhysRevLett.90.146801, http://prl.aps.org/pdf/PRL/v90/i14/e146801


Abstract

We propose a spin-field-effect transistor based on spin-orbit coupling of both the Rashba and the Dresselhaus types. Different from earlier proposals, spin transport through our device is tolerant against spin-independent scattering processes. Hence the requirement of strictly ballistic transport can be relaxed. This follows from a unique interplay between the Dresselhaus and the Rashba coupling; ...

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Item type:Article
Date:8 April 2003
Institutions:Physics > Institute of Theroretical Physics > Chair Professor Grifoni > Group John Schliemann
Projects:NCCR
Identification Number:
ValueType
10.1103/PhysRevLett.90.146801DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:No
Item ID:28239
Owner only: item control page

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