Abstract
We consider nanojunctions in the single electron tunnelling regime which, due to a high degree of spatial symmetry, have a degenerate many-body spectrum. They comprise single molecule quantum dots as well as artificial quantum dot molecules. As a consequence, interference phenomena which cause a current blocking can occur at specific values of the bias and gate voltage. We present here a general ...
Abstract
We consider nanojunctions in the single electron tunnelling regime which, due to a high degree of spatial symmetry, have a degenerate many-body spectrum. They comprise single molecule quantum dots as well as artificial quantum dot molecules. As a consequence, interference phenomena which cause a current blocking can occur at specific values of the bias and gate voltage. We present here a general formalism providing necessary and sufficient conditions for interference blockade also in the presence of spin-polarized leads. As examples we analyze a triple quantum dot as well as a benzene molecule single electron transistor.
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