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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-307504
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.30750
Alternative Links zum Volltext:DOI
Zusammenfassung
The spin-orbit interaction (SOI) of a two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observe weak antilocalization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrate electric field control of the Rashba ...
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