Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Strained-Ge/SiGe Quantum Well

URN to cite this document:: urn:nbn:de:bvb:355-epub-307504
DOI to cite this document:: 10.5283/epub.30750

Moriya, Rai ; Sawano, Kentarou ; Hoshi, Yusuke ; Masubuchi, Satoru ; Shiraki, Yasuhiro ; Wild, Andreas ; Neumann, Christian ; Abstreiter, Gerhard ; Bougeard, Dominique ; Koga, Yasuhiro ; Machida, Tomoki

Preview

PDF
(347kB)

Date of publication of this fulltext: 15 Sep 2014 13:18

Alternative links to fulltext:DOI

Details

Preview

Export bibliographical data

Abstract

The spin-orbit interaction (SOI) of a two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observe weak antilocalization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrate electric field control of the Rashba ...