| PDF - Angenommene Version (273kB) |
- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-314948
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.31494
![[img]](https://epub.uni-regensburg.de/style/images/fileicons/other.png)
Zusammenfassung
We report on the observation of magnetic quantum ratchet effect in metal-oxidesemiconductor field-effect-transistors on silicon surface (Si-MOSFETs). We show that the excitation of an unbiased transistor by ac electric field of terahertz radiation at normal incidence leads to a direct electric current between the source and drain contacts if the transistor is subjected to an in-plane magnetic ...
Nur für Besitzer und Autoren: Kontrollseite des Eintrags
Downloadstatistik