Magnetic quantum ratchet effect in Si-MOSFETs

URN to cite this document:: urn:nbn:de:bvb:355-epub-314948
DOI to cite this document:: 10.5283/epub.31494

Ganichev, Sergey ; Tarasenko, Sergey ; Karch, Johannes ; Kamann, Josef ; Kvon, Z. D.

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Date of publication of this fulltext: 20 Mar 2015 08:27

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Abstract

We report on the observation of magnetic quantum ratchet effect in metal-oxide-semiconductor field-effect-transistors on silicon surface (Si-MOSFETs). We show that the excitation of an unbiased transistor by ac electric field of terahertz radiation at normal incidence leads to a direct electric current between the source and drain contacts if the transistor is subjected to an in-plane magnetic ...