| Lizenz: Creative Commons Namensnennung 3.0 de (2MB) |
- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-317592
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.31759
Zusammenfassung
Through a combination of experimental techniques we show that the topmost layer of the topological insulator TlBiSe2 as prepared by cleavage is formed by irregularly shaped Tl islands at cryogenic temperatures and by mobile Tl atoms at room temperature. No trivial surface states are observed in photoemission at low temperatures, which suggests that these islands cannot be regarded as a clear ...
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