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Atomic Resolution of the Silicon (111 )-(7x 7) Surface by Atomic Force Microscopy
Artikel
Giessibl, Franz J. (1995) Atomic Resolution of the Silicon (111 )-(7x 7) Surface by Atomic Force Microscopy. Science 267 (5194), S. 68-71.DOI zum Zitieren dieses Dokuments: 10.5283/epub.33828
Zusammenfassung
Achieving high resolution under ultrahigh-vacuum conditions with the force microscope can be difficult for reactive surfaces, where the interaction forces between the tip and the samples can be relatively large. A force detection scheme that makes use of a modified cantilever beam and senses the force gradient through frequency modulation is described. The reconstructed silicon (111)-(7x7) ...
Achieving high resolution under ultrahigh-vacuum conditions with the force microscope can be difficult for reactive surfaces, where the interaction forces between the tip and the samples can be relatively large. A force detection scheme that makes use of a modified cantilever beam and senses the force gradient through frequency modulation is described. The reconstructed silicon (111)-(7x7) surface was imaged in a noncontact mode by force microscopy with atomic resolution (6 angstroms lateral, 0.1 angstrom vertical).
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Details
| Dokumentenart | Artikel | ||||
| Titel eines Journals oder einer Zeitschrift | Science | ||||
| Verlag | AAAS | ||||
| Band | 267 | ||||
| Nummer des Zeitschriftenheftes oder des Kapitels | 5194 | ||||
| Seitenbereich | S. 68-71 | ||||
| Datum | 6 Januar 1995 | ||||
| Veröffentlichungsdatum | 31 Mai 2016 08:20 | ||||
| Institutionen | Physik > Institut für Experimentelle und Angewandte Physik > Lehrstuhl Professor Giessibl > Arbeitsgruppe Franz J. Giessibl | ||||
| Identifikationsnummer |
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| Dewey-Dezimal-Klassifikation | 500 Naturwissenschaften und Mathematik > 530 Physik | ||||
| Status | Veröffentlicht | ||||
| Begutachtet | Ja, diese Version wurde begutachtet | ||||
| An der Universität Regensburg entstanden | Unbekannt / Keine Angabe | ||||
| URN der UB Regensburg | urn:nbn:de:bvb:355-epub-338281 | ||||
| Dokumenten-ID | 33828 |
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