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Giessibl, Franz J.

Atomic Resolution of the Silicon (111 )-(7x 7) Surface by Atomic Force Microscopy

Giessibl, Franz J. (1995) Atomic Resolution of the Silicon (111 )-(7x 7) Surface by Atomic Force Microscopy. Science 267 (5194), pp. 68-71.

Date of publication of this fulltext: 31 May 2016 08:20
Article
DOI to cite this document: 10.5283/epub.33828


Abstract

Achieving high resolution under ultrahigh-vacuum conditions with the force microscope can be difficult for reactive surfaces, where the interaction forces between the tip and the samples can be relatively large. A force detection scheme that makes use of a modified cantilever beam and senses the force gradient through frequency modulation is described. The reconstructed silicon (111)-(7x7) ...

Achieving high resolution under ultrahigh-vacuum conditions with the force microscope can be difficult for reactive surfaces, where the interaction forces between the tip and the samples can be relatively large. A force detection scheme that makes use of a modified cantilever beam and senses the force gradient through frequency modulation is described. The reconstructed silicon (111)-(7x7) surface was imaged in a noncontact mode by force microscopy with atomic resolution (6 angstroms lateral, 0.1 angstrom vertical).



Involved Institutions


Details

Item typeArticle
Journal or Publication TitleScience
Publisher:AAAS
Volume:267
Number of Issue or Book Chapter:5194
Page Range:pp. 68-71
Date6 January 1995
InstitutionsPhysics > Institute of Experimental and Applied Physics > Chair Professor Giessibl > Group Franz J. Giessibl
Identification Number
ValueType
10.1126/science.267.5194.68DOI
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedYes, this version has been refereed
Created at the University of RegensburgUnknown
URN of the UB Regensburgurn:nbn:de:bvb:355-epub-338281
Item ID33828

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