Fano stability diagram of a symmetric triple quantum dot

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Abstract

The Fano factor stability diagram of a C3v symmetric triangular quantum dot is analysed for increasing electron fillings N. At low filling, conventional Poissonian and sub-Poissonian behavior, caused by the interplay of electron-electron interactions and Fermi statistics, is found. At larger filling, N ≥ 2, super-Poissonian noise and a peculiar bias voltage dependence of the Fano factor are ...

Abstract

The Fano factor stability diagram of a C3v symmetric triangular quantum dot is analysed for increasing electron fillings N. At low filling, conventional Poissonian and sub-Poissonian behavior, caused by the interplay of electron-electron interactions and Fermi statistics, is found. At larger filling, N ≥ 2, super-Poissonian noise and a peculiar bias voltage dependence of the Fano factor are observed at Coulomb and interference blockade. An analysis of the Fano map unravels a nontrivial electron bunching mechanism arising from the presence of degenerate many-body states combined with orbital interference and Coulomb interactions.