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Hall field-induced resistance oscillations in a tunable-density GaAs quantum well

Zudov, M. A., Dmitriev, I. A. , Friess, B., Shi, Q., Umansky, V., von Klitzing, K. and Smet, J. (2017) Hall field-induced resistance oscillations in a tunable-density GaAs quantum well. Physical Review B 96 (12).

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Other URL: http://doi.org/10.1103/PhysRevB.96.121301


Abstract

We report on Hall field-induced resistance oscillations (HIROs) in a 60-nm-wide GaAs/AlGaAs quantum well with an in situ grown back gate, which allows tuning the carrier density n. At low n, when all electrons are confined to the lowest subband (SB1), the HIRO frequency, proportional to the product of the cyclotron diameter and the Hall field, scales with n(-1/2) as expected. Remarkably, the ...

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Item type:Article
Date:2017
Institutions:Physics > Institute of Theroretical Physics > Chair Professor Grifoni > Group Milena Grifoni
Physics > Institute of Theroretical Physics > Chair Professor Grifoni > Group John Schliemann
Physics > Institute of Theroretical Physics > Chair Professor Grifoni > Group Ferdinand Evers
Physics > Institute of Theroretical Physics > Chair Professor Grifoni > Group David Egger
Identification Number:
ValueType
10.1103/PhysRevB.96.121301DOI
Keywords:2-DIMENSIONAL ELECTRON-GAS; SYSTEM; HETEROSTRUCTURES; PHYSICS; MBE;
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:39173
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