Hall field-induced resistance oscillations in a tunable-density GaAs quantum well

URN to cite this document:: urn:nbn:de:bvb:355-epub-391731
DOI to cite this document:: 10.5283/epub.39173

Zudov, M. A. ; Dmitriev, I. A.

; Friess, B. ; Shi, Q. ; Umansky, V. ; von Klitzing, K. ; Smet, J.

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Date of publication of this fulltext: 20 Mar 2019 13:00

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Abstract

We report on Hall field-induced resistance oscillations (HIROs) in a 60-nm-wide GaAs/AlGaAs quantum well with an in situ grown back gate, which allows tuning the carrier density n. At low n, when all electrons are confined to the lowest subband (SB1), the HIRO frequency, proportional to the product of the cyclotron diameter and the Hall field, scales with n(-1/2) as expected. Remarkably, the ...