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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-405950
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.40595
Alternative Links zum Volltext:DOI
Zusammenfassung
We show the results of two-terminal and four-terminal transport measurements on few-layer NbSe2 devices at large current bias. In all the samples measured, transport characteristics at high bias are dominated by a series of resistance jumps due to nucleation of phase slip lines, the two dimensional analogue of phase slip centers. In point contact devices the relatively simple and homogeneous ...
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