| Lizenz: Creative Commons Namensnennung 3.0 de PDF - Veröffentlichte Version (2MB) |
- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-405950
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.40595
Alternative Links zum Volltext:DOI
Zusammenfassung
We show the results of two-terminal and four-terminal transport measurements on few-layer NbSe2 devices at large current bias. In all the samples measured, transport characteristics at high bias are dominated by a series of resistance jumps due to nucleation of phase slip lines, the two dimensional analogue of phase slip centers. In point contact devices the relatively simple and homogeneous ...
Nur für Besitzer und Autoren: Kontrollseite des Eintrags
Downloadstatistik
