Go to content
UR Home

Phase slip lines in superconducting few-layer NbSe2 crystals

URN to cite this document:
DOI to cite this document:
Paradiso, Nicola ; Strunk, Christoph ; Nguyen, Anh-Tuan ; Kloss, Karl Enzo
License: Creative Commons: Attribution 3.0
PDF - Published Version
Date of publication of this fulltext: 30 Jul 2019 13:04


We show the results of two-terminal and four-terminal transport measurements on few-layer NbSe2 devices at large current bias. In all the samples measured, transport characteristics at high bias are dominated by a series of resistance jumps due to nucleation of phase slip lines, the two dimensional analogue of phase slip centers. In point contact devices the relatively simple and homogeneous ...


Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons