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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-433462
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.43346
Zusammenfassung
Diffusion of boron (B) in germanium (Ge) at temperatures ranging between 800 degrees C and 900 degrees C is revisited following the most recent results reported by Uppal et al. [J. Appl. Phys. 96, 1376 (2004)] that have been obtained mainly with implantation doped samples. In this work, we determined the intrinsic B diffusivity by employing epitaxially grown alternating undoped and B-doped Ge ...
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