ZIP-Archiv - Daten (33MB) - Nur für Mitarbeiter des Archivs |
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.43815
Zusammenfassung
Three-dimensional topological insulators (TIs) have attracted tremendous interest for their possibility to host massless Dirac Fermions in topologically protected surface states (TSSs), which may enable new kinds of high-speed electronics. However, recent reports have outlined the importance of band bending effects within these materials, which results in an additional two-dimensional electron ...
Nur für Besitzer und Autoren: Kontrollseite des Eintrags