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Tunneling mechanism in a (Ga,Mn)As/GaAs-based spin Esaki diode investigated by bias-dependent shot noise measurements

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Arakawa, T. ; Shiogai, Junichi ; Maeda, M. ; Ciorga, Mariusz ; Utz, Martin ; Schuh, Dieter ; Niimi, Y. ; Kohda, M. ; Nitta, Junsaku ; Bougeard, Dominique ; Weiss, Dieter ; Kobayashi, K.
Date of publication of this fulltext: 20 Jan 2021 11:31


Electron transport across a tunneling barrier is governed by intricate and diverse causes such as interface conditions, material properties, and device geometries. Here, by measuring the shot noise, we investigate electron transport in a (Ga,Mn)As/GaAs-based spin Esaki diode junction over a wide range of bias voltage. The asymmetric electronic band profile across the junction allows us to tune ...


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