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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-444417
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.44441
Alternative Links zum Volltext:DOI
Zusammenfassung
Electron transport across a tunneling barrier is governed by intricate and diverse causes such as interface conditions, material properties, and device geometries. Here, by measuring the shot noise, we investigate electron transport in a (Ga,Mn)As/GaAs-based spin Esaki diode junction over a wide range of bias voltage. The asymmetric electronic band profile across the junction allows us to tune ...
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