Tunneling mechanism in a (Ga,Mn)As/GaAs-based spin Esaki diode investigated by bias-dependent shot noise measurements

URN to cite this document:: urn:nbn:de:bvb:355-epub-444417
DOI to cite this document:: 10.5283/epub.44441

Arakawa, T.

; Shiogai, Junichi

; Maeda, M. ; Ciorga, Mariusz

; Utz, Martin ; Schuh, Dieter ; Niimi, Y.

; Kohda, M. ; Nitta, Junsaku ; Bougeard, Dominique

; Weiss, Dieter

; Kobayashi, K.

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Date of publication of this fulltext: 20 Jan 2021 11:31

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Abstract

Electron transport across a tunneling barrier is governed by intricate and diverse causes such as interface conditions, material properties, and device geometries. Here, by measuring the shot noise, we investigate electron transport in a (Ga,Mn)As/GaAs-based spin Esaki diode junction over a wide range of bias voltage. The asymmetric electronic band profile across the junction allows us to tune ...