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Influence of the epitaxial composition on N-face GaN KOH etch kinetics determined by ICP-OES

Tautz, Markus ; Kuchenbrod, Maren T. ; Hertkorn, Joachim ; Weinberger, Robert ; Welzel, Martin ; Pfitzner, Arno ; Díaz Díaz, David
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Roughening by anisotropic etching of N-face gallium nitride is the key aspect in today's production of blue and white light emitting diodes (LEDs). Both surface area and number of surface angles are increased, facilitating light outcoupling from the LED chip. The structure of a GaN layer stack grown by metal organic chemical vapour deposition (MOCVD) was varied in the unintentionally doped u-GaN ...


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