Fujii, J. ; Salles, B. R. ; Sperl, M. ; Ueda, S. ; Kobata, M. ; Kobayashi, K. ; Yamashita, Y. ; Torelli, P. 
; Utz, M. ; Fadley, C. S. ; Gray, A. X. ; Braun, J. ; Ebert, H. ; Di Marco, I. ; Eriksson, O. ; Thunström, P. ; Fecher, G. H. ; Stryhanyuk, H. ; Ikenaga, E. ; Minár, J. ; Back, C. H. ; van der Laan, G. ; Panaccione, G.
; Utz, M. ; Fadley, C. S. ; Gray, A. X. ; Braun, J. ; Ebert, H. ; Di Marco, I. ; Eriksson, O. ; Thunström, P. ; Fecher, G. H. ; Stryhanyuk, H. ; Ikenaga, E. ; Minár, J. ; Back, C. H. ; van der Laan, G. ; Panaccione, G. 
Zusammenfassung
We report high-resolution hard x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of Mn doping. Supported by theoretical calculations we identify, for both low (1%) and high (13%) Mn doping values, the electronic character of the states near the top of the valence band. Magnetization and temperature-dependent core-level photoemission spectra reveal how the delocalized character of the Mn states enables the bulk ferromagnetic properties of (Ga,Mn)As.
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