Hof, K.-D. ; Rossler, C. ; Manus, S. ; Kotthaus, J. P. ; Holleitner, A. W. ; Schuh, D. ; Wegscheider, W.
Alternative Links zum Volltext:DOIVerlag
| Dokumentenart: | Artikel |
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| Titel eines Journals oder einer Zeitschrift: | Physical Review B |
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| Verlag: | AMER PHYSICAL SOC |
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| Ort der Veröffentlichung: | COLLEGE PK |
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| Band: | 78 |
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| Nummer des Zeitschriftenheftes oder des Kapitels: | 11 |
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| Datum: | 2008 |
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| Institutionen: | Physik > Institut für Experimentelle und Angewandte Physik |
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| Identifikationsnummer: | | Wert | Typ |
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| 10.1103/PhysRevB.78.115325 | DOI |
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| Stichwörter / Keywords: | POINT CONTACTS; TRANSPORT; QUANTIZATION; CONDUCTANCE; |
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| Dewey-Dezimal-Klassifikation: | 500 Naturwissenschaften und Mathematik > 530 Physik |
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| Status: | Veröffentlicht |
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| Begutachtet: | Ja, diese Version wurde begutachtet |
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| An der Universität Regensburg entstanden: | Ja |
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| Dokumenten-ID: | 67903 |
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Zusammenfassung
We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which ...
Zusammenfassung
We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which shift the chemical potential of the quantum wire. The nonlinear current-voltage characteristics of the quantum wires also allow detecting the photoresponse effect of excess charge carriers in the conduction band of the quantum well. The dynamics of the photoconductive gain are limited by the recombination time of both electrons and holes.
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