Zusammenfassung
We investigate electronic transport properties of Schottky-barrier field-effect transistors (FETs) based on double-walled carbon nanotubes (DWCNTs) with a semiconducting outer shell and a metallic inner one. This kind of DWCNT-FETs shows asymmetries of the I-V characteristics and threshold voltages due to the electron-hole asymmetry of the Schottky barrier. The presence of the metallic inner ...
Zusammenfassung
We investigate electronic transport properties of Schottky-barrier field-effect transistors (FETs) based on double-walled carbon nanotubes (DWCNTs) with a semiconducting outer shell and a metallic inner one. This kind of DWCNT-FETs shows asymmetries of the I-V characteristics and threshold voltages due to the electron-hole asymmetry of the Schottky barrier. The presence of the metallic inner shell induces a large effective band gap, which is one order of magnitude larger than that due to the semiconducting shell alone of a single-walled carbon-nanotube FET.
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