Startseite UR
Einträge von Faltermeier, Philipp auf dem Publikationsserver
 | Eine Stufe nach oben |
Anzahl der Einträge: 5.
2018
Faltermeier, Philipp, Budkin, G. V., Hubmann, Stefan, Belkov, Vassilij, Golub, Leonid, Ivchenko, Eougenious, Adamus, Z., Karczewski, G., Wojtowicz, Tomasz, Kozlov, D. A., Weiss, Dieter 
und Ganichev, Sergey
(2018)
Circular and linear magnetic quantum ratchet effects in dual-grating-gate CdTe-based nanostructures.
Physica E Low-dimensional Systems and Nanostructures 101, S. 178-187.
Volltext nicht vorhanden.
und Ganichev, Sergey
(2018)
Circular and linear magnetic quantum ratchet effects in dual-grating-gate CdTe-based nanostructures.
Physica E Low-dimensional Systems and Nanostructures 101, S. 178-187.
Volltext nicht vorhanden.
2017
Faltermeier, Philipp
(2017)
Terahertz Laser Induced Ratchet Effects and Magnetic Quantum Ratchet Effects in Semiconductor Nanostructures.
Dissertation, Universität Regensburg.
Faltermeier, Philipp, Budkin, G. V., Unverzagt, Jan, Hubmann, Stefan, Pfaller, A., Belkov, Vassilij, Golub, Leonid, Ivchenko, Eougenious, Adamus, Z., Karczewski, G., Wojtowicz, Tomasz, Popov, V. V., Fateev, D. V. , Kozlov, D. A., Weiss, Dieter und Ganichev, Sergey
(2017)
Magnetic quantum ratchet effect in (Cd,Mn)Te- and CdTe-based quantum well structures with a lateral asymmetric superlattice.
Physical Review B (PRB) 95 (15), S. 1554421-15544212.
2015
Dantscher, Kathrin-Maria, Kozlov, D. A., Olbrich, Peter, Zoth, Christina, Faltermeier, Philipp, Lindner, M., Budkin, G. V., Tarasenko, Sergey, Belkov, Vassilij, Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., Weiss, Dieter , Jenichen, B. und Ganichev, Sergey
(2015)
Cyclotron-resonance-assisted photcurrents in surface states of a three-dimensional topological insulator based on a strained high-mobility HgTe film.
Physical Review B (PRB) 92 (16), S. 165314.
Faltermeier, Philipp, Olbrich, Peter, Probst, W., Schell, L., Watanabe, T., Boubanga-Tombet, S. A., Otsuji, T. und Ganichev, Sergey
(2015)
Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors.
Journal of Applied Physics 118 (8), 084301.
Universitätsbibliothek
Publikationsserver
Kontakt:
Publizieren: oa@ur.de
0941 943 -4239 oder -69394
Dissertationen: dissertationen@ur.de
0941 943 -3904
Forschungsdaten: datahub@ur.de
0941 943 -5707