Entries of Vorobjev, L. E. on the publication server
![]() | Up a level |
Jump to: Article | Book section
Number of items: 5.
Article
Sofronov, A. N., Balagula, R. M., Firsov, D. A., Vorobjev, L. E., Tonkikh, A. A., Sarkisyan, H. A., Hayrapetyan, D. B., Petrosyan, L. S. and Kazaryan, E. M.
(2018)
Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots.
Semiconductors 52 (1), pp. 59-63.
Fulltext not available.
Firsov, D. A., Vorobjev, L. E., Shalygin, V. A., Sofronov, A. N., Vinchenko, M. Ya., Thumrogsilapa, P., Ganichev, Sergey, Danilov, S. N. and Zhukov, A. E.
(2010)
Absorption and modulation of radiation in nanostructures with p-GaAs/AlGaAs QWs.
Bulletin of the Russian Academy of Sciences : Physics 74, p. 91.
Fulltext not available.
Vorobjev, L. E., Firsov, D. A., Shalygin, Vadim, Panevin, V. Y., Sofronov, A. N., Ustinov, V. M., Zhukov, A. E., Egorov, A. Yu., Andrianov, A. V., Zakhar'in, A. O., Ganichev, Sergey, Danilov, Sergey and Kozlov, D. V.
(2008)
Terahertz luminescence and absorption under impurity breakdown in quantum wells and
strained semiconductor layers. Acta Physica Polonica A 113, p. 925. Fulltext not available.
strained semiconductor layers. Acta Physica Polonica A 113, p. 925. Fulltext not available.
Ganichev, Sergey, Danilov, Sergey, Belkov, Vassilij, Ivchenko, Eougenious, Ketterl, Hermann, Wegscheider, Werner, Vorobjev, L. E., Bichler, Max and Prettl, Wilhelm
(2001)
Nonlinear photogalvanic effect induced by monopolar spin orientation of holes in QWs.
Physica E Low-dimensional Systems and Nanostructures 10 (1-3), pp. 52-56.
Fulltext restricted.
Book section
Ganichev, Sergey, Ivchenko, Eougenious, Ketterl, Hermann, Vorobjev, L. E., Bichler, Max, Wegscheider, Werner and Prettl, Wilhelm
(2001)
Circular photogalvanic effect in p-GaAs/AlGaAs MQW.
In: Miura, Noboru and Ando, T., (eds.)
Proceedings of the 25th International Conference on the Physics of Semiconductors.
Springer proceedings in physics, 87.
Springer, Berlin, pp. 719-720.
ISBN 3-540-41778-8.
Fulltext not available.
