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Low-temperature electronic transport measurements on a gated delta -doped GaAs sample: magnetoresistance, quantum Hall effect and conductivity fluctuations

Dötzer, R. and Friedland, K. J. and Hey, R. and Kostial, H. and Miehling, H. and Schoepe, Wilfried (1994) Low-temperature electronic transport measurements on a gated delta -doped GaAs sample: magnetoresistance, quantum Hall effect and conductivity fluctuations. Semiconductor Science and Technology 9 (7), pp. 1332-1339.

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Abstract

We present magnetotransport measurements (up to 7 T) performed at very low temperatures (down to 20 mK) on a GaAs sample containing two parallel delta -doped layers whose carrier concentration can be varied by means of a gate electrode. With increasing negative gate voltage the resistance becomes more strongly temperature-dependent, indicating a more localized electron system. The ...

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Item Type:Article
Date:1994
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Prof. Wilfried Schoepe
Identification Number:
ValueType
10.1088/0268-1242/9/7/006DOI
Classification:
NotationType
72.20.My Galvanomagnetic and other magnetotransport effectsPACS
73.43.Qt MagnetoresistancePACS
72.80.Ey III-V and II-VI semiconductorsPACS
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Universitätsbibliothek Regensburg
Deposited On:17 Dec 2010 07:11
Last Modified:13 Mar 2014 14:32
Item ID:18802
Owner Only: item control page
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