Dötzer, R., Friedland, K. J., Hey, R., Kostial, H., Miehling, H. und Schoepe, Wilfried
Low-temperature electronic transport measurements on a gated delta -doped GaAs sample: magnetoresistance, quantum Hall effect and conductivity fluctuations.
Semiconductor Science and Technology 9 (7), S. 1332-1339.
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We present magnetotransport measurements (up to 7 T) performed at very low temperatures (down to 20 mK) on a GaAs sample containing two parallel delta -doped layers whose carrier concentration can be varied by means of a gate electrode. With increasing negative gate voltage the resistance becomes more strongly temperature-dependent, indicating a more localized electron system. The ...
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