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Number of items: 7.

Article

Ganichev, Sergey and Dmitriev, A. and Emel'yanov, S. and Terent'ev, Y. and Yaroshetskii, I. and Yassievich, I. (1986) Impact ionization in semiconductors under the influence of the electric field of an optical wave. Soviet physics JETP 63 (2), pp. 256-263.

Ganichev, Sergey and Dmitriev, A. and Emel'yanov, S. and Terent'ev, Y. and Yaroshetskii, I. and Yassievich, I. (1984) Impact ionization in a semiconductor in a light wave. JETP Letters 40 (5), pp. 948-951.

Book Section

Ganichev, Sergey and Dmitriev, A. and Emel'yanov, S. and Terent'ev, Y. and Yaroshetskii, I. and Yassievich, Irina (1988) Light impact ionization in semiconductors. In: Zawadzki, Włodzimierz, (ed.) 19th International Conference on the Physics of Semiconductors. Band 2: Warsaw, Poland, Aug. 15-19, 1988. Institute of Physics, Polish Academy of Sciences, Warsaw, pp. 1373-1376. ISBN 83-00-02465-4.

Conference or Workshop Item

Ganichev, Sergey and Dmitriev, A. and Emel'yanov, S. and Terent'ev, Y. and Yaroshetskii, I. and Yassievich, I. (1988) Light impact ionization in InSb. In: 3rd Conference on Physics and Technology of GaAs and other A3-B5 Semiconductors, 28. November - 02. Dezember 1988, Tatranska Lomnisa.

Ganichev, Sergey and Dmitriev, A. and Emel'yanov, S. and Terent'ev, Y. and Yaroshetskii, I. and Yassievich, Irina (1988) Light impact ionization in semiconductors. In: 19th International Conference on the Physics of Semiconductors, 15. - 19. August 1988, Warsaw, Poland.

Ganichev, Sergey and Dmitriev, A. and Emel'yanov, S. and Terent'ev, Y. and Yaroshetskii, I. and Yassievich, I. (1986) Impact ionization in semiconductors under the influence of the electric field of an optical wave. In: 6th Soviet Conference on Plasma and Current Instabilities in Semiconductors, 1986, Vilnus, USSR.

Ganichev, Sergey and Dmitriev, A. and Emel'yanov, S. and Terent'ev, Y. and Yaroshetskii, I. and Yassievich, I. (1986) To the question of impact ionization in p-type InSb. In: 6th Soviet Conference on Plasma and Current Instabilities in Semiconductors, 1986, Vilnus, USSR.

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