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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-593236
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.59323
Zusammenfassung
Van der Waals (vdW) heterostructures provide a rich playground to engineer electronic, spin, and optical properties of individual two-dimensional materials. We investigate the twist-angle and gate dependence of the proximity-induced exchange coupling in the monolayer transition-metal dichalcogenides (TMDCs) MoSe2 and WSe2 due to the vdW coupling to the ferromagnetic semiconductor CrI3, from ...
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