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2005

Able, Andreas, Wegscheider, Werner, Engl, Karl and Zweck, Josef (2005) Growth of crack-free GaN on Si(1 1 1) with graded AlGaN buffer layers. Journal of Crystal Growth 276 (3-4), pp. 415-418. Fulltext restricted.

Able, Andreas (2005) Untersuchungen zur metallorganischen Gasphasenepitaxie von Gruppe III Nitriden auf Silizium (111). PhD, Universität Regensburg.

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