Einträge von Lechner, Vera auf dem Publikationsserver

Kohda, M., Lechner, Vera, Kunihashi, Y., Dollinger, Tobias , Olbrich, Peter, Schönhuber, Christoph, Caspers, Ines, Belkov, Vassilij, Golub, Leonid , Weiss, Dieter , Richter, Klaus, Nitta, J. und Ganichev, Sergey (2012) Gate-controlled persistent spin helix state in (In,Ga)As quantum wells. Physical Review B (PRB) 8 (86), 081306.

Lechner, Vera, Golub, Leonid , Lomakina, F., Belkov, Vassilij, Olbrich, Peter, Stachel, Sebastian, Caspers, Ines, Griesbeck, Michael, Kugler, Michael, Hirmer, Michael, Korn, Tobias , Schueller, Christian, Schuh, Dieter, Wegscheider, Werner und Ganichev, Sergey (2011) Spin and orbital mechanisms of the magnetogyrotropic photogalvanic effects in GaAs/AlxGa1-xAs quantum well structures. Physical Review B (PRB) 83 (15), S. 155313.

Drexler, Christoph, Belkov, Vassilij, Ashkinadze, B., Olbrich, Peter, Zoth, Christina, Lechner, Vera, Terent'ev, Ya. V., Yakovlev, D. R. , Karczewski, G., Wojtowicz, Tomasz, Schuh, Dieter, Wegscheider, Werner und Ganichev, Sergey (2010) Spin polarized electric currents in semiconductor heterostructures induced by microwave radiation. Applied Physics Letters 97 (18), S. 182107. Volltext nicht vorhanden.

Lechner, Vera, Golub, Leonid , Olbrich, Peter, Stachel, Sebastian, Schuh, Dieter, Wegscheider, Werner, Belkov, Vassilij und Ganichev, Sergey (2009) Tuning of structure inversion asymmetry by the delta-doping position in (001)-grown GaAs quantum wells. Applied Physics Letters 94, 242109-1-242109-3.

Lechner, Vera (2012) Bulk and structure inversion asymmetry in semiconductor quantum well structures. Dissertation, Universität Regensburg.