Number of items: 11.
2003
Belkov, Vassilij,
Ganichev, Sergey,
Schneider, Petra,
Schowalter, D.,
Rössler, Ulrich,
Prettl, Wilhelm,
Ivchenko, Eougenious,
Neumann, Richard,
Brunner, K. and
Abstreiter, Gerhard
(2003)
Spin-photocurrent in p-SiGe quantum wells under terahertz laser irradiation.
Journal of Superconductivity: Incorporating Novel Magnetism 16 (2), pp. 415-418.
Belkov, Vassilij,
Ganichev, Sergey,
Schneider, Petra,
Schowalter, D.,
Rössler, Ulrich,
Prettl, Wilhelm,
Ivchenko, E.,
Neumann, Richard,
Brunner, K. and
Abstreiter, Gerhard
(2003)
Spin-Photocurrent in p-SiGe quantum wells under terahertz laser irradiation.
Journal of Superconductivity 16 (2), pp. 415-418.
Fulltext restricted.
2002
Ganichev, Sergey,
Rössler, Ulrich,
Prettl, Wilhelm,
Ivchenko, E.,
Belkov, Vassilij,
Neumann, Richard,
Brunner, K. and
Abstreiter, Gerhard
(2002)
Removal of spin-degenerancy in p-SiGe quantum wells demonstrated by spin-photocurrents.
Physical Review B 66 (7), p. 75328.
Fulltext restricted.
Ganichev, Sergey,
Rössler, Ulrich,
Prettl, Wilhelm,
Ivchenko, Eougenious,
Belkov, Vassilij,
Neumann, Richard,
Brunner, K. and
Abstreiter, Gerhard
(2002)
Removal of spin degeneracy in SiGe-based nanostructures.
In:
Alferov, Zhores I. and
Esaki, Leo, (eds.)
10th International Symposium on Nanostructures: Physics and Technology.
SPIE proceedings series, 5023.
SPIE, Bellingham, Washington, p. 169.
ISBN 0-8194-4824-9.
Fulltext not available.
Ganichev, Sergey,
Rössler, Ulrich,
Kalz, Franz-Peter,
Prettl, Wilhelm,
Neumann, Richard,
Brunner, Karl,
Abstreiter, Gerhard and
Ivchenko, Eougenious
(2002)
Sympos. Circular photogalvanic effect in Si/Ge semiconductor quantum wells.
In:
Klemmer, Timothy J. and
Sun, Jonathan Z. and
Fert, Albert and
Bass, Jack, (eds.)
Materials Research Society symposium proceedings; 690.
MRS, Warrendale, Pa., F3.11.1.
ISBN 1-558-99626-5.
Sollinger, M.,
Ganichev, Sergey,
Kalz, Franz-Peter,
Rössler, Ulrich,
Prettl, Wilhelm,
Ivchenko, Eougenious,
Belkov, Vassilij,
Neumann, Richard,
Brunner, K. and
Abstreiter, Gerhard
(2002)
Photogalvanischer Effekt in Si/Ge-Quantentrögen.
In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 11. - 15. März 2002, Regensburg.
Fulltext not available.
Ganichev, Sergey,
Rössler, Ulrich,
Prettl, Wilhelm,
Ivchenko, Eougenious,
Belkov, Vassilij,
Neumann, Richard,
Brunner, K. and
Abstreiter, Gerhard
(2002)
Removal of spin degeneracy in SiGe based nanostructures.
In:
Alferov, Zhores I. and
Esaki, Leo, (eds.)
Nanostructures: physics and technology: 10th international symposium, St. Petersburg, Russia, June 17 - 21, 2002; proceedings.
SPIE proceedings series, 5023.
SPIE, Bellingham, Washington, pp. 187-190.
ISBN 0-8194-4824-9.
2001
Ganichev, Sergey,
Kalz, Franz-Peter,
Prettl, Wilhelm,
Neumann, Richard,
Brunner, K.,
Abstreiter, Gerhard and
Ivchenko, Eougenious
(2001)
Circular photogalvanic effect in Si/Ge semiconductor quantum wells.
In: MRS Fall Meeting, 26. - 30. November 2001, Boston, Massachusetts, USA.
Fulltext not available.
Ganichev, Sergey,
Rössler, Ulrich,
Prettl, Wilhelm,
Ivchenko, Eougenious,
Belkov, Vassilij,
Neumann, Richard,
Brunner, K. and
Abstreiter, Gerhard
(2001)
Removal of spin degeneracy in SiGe based nanostructures.
In: 9th International Symposium Nanostructures: Physics and Technology, 18. - 22. Juni 2001, St. Petersburg, Russia.
Fulltext not available.
1998
1997
Baumgartner, P.,
Wegscheider, Werner,
Bichler, Max,
Schedelbeck, G.,
Neumann, Richard and
Abstreiter, Gerhard
(1997)
Single-electron transistor fabricated by focused laser beam-induced doping of a GaAs/AlGaAs heterostructure.
Applied Physics Letters 70 (16), pp. 2135-2137.
Fulltext restricted.
This list was generated on Wed Apr 23 06:57:05 2025 CEST.