Anzahl der Einträge: 14.
Perel', V.,
Tarasenko, S.,
Yassievich, I.,
Ganichev, Sergey,
Belkov, Vassilij und
Prettl, Wilhelm
(2003)
Spin-dependent tunneling through a symmetric semiconductor barrier.
Physical Review B 67 (20), S. 201304.
Zugang zum Volltext eingeschränkt.
Ganichev, Sergey,
Danilov, Sergey,
Sollinger, M.,
Zimmermann, J.,
Moskalenko, A.,
Perel, V.,
Yassievich, I.,
Back, Christian und
Prettl, Wilhelm
(2003)
Magnetic field effect on tunnel ionization of deep impurities by terahertz radiation.
In:
Hiromoto, N., (ed.)
Int. Conf. IR&MM-Waves, Otsu (Japan) (2003), Conf. Digest, W5-1.
., Japan.
Volltext nicht vorhanden.
Ganichev, Sergey,
Danilov, Sergey,
Sollinger, M.,
Zimmermann, J.,
Moskalenko, A.,
Perel, V.,
Yassievich, I.,
Back, Christian und
Prettl, Wilhelm
(2003)
Magnetic field effect on tunnel ionization of deep impurities by terahertz radiation.
Physica B Condensed Matter 340-34, S. 1155-1158.
Ganichev, Sergey,
Danilov, Sergey,
Sollinger, M.,
Zimmermann, J.,
Moskalenko, A.,
Perel, V.,
Yassievich, I.,
Back, Christian und
Prettl, Wilhelm
(2003)
Magnetic field effect on tunnel ionization of deep impurities by terahertz radiation.
In: Proc. of 28th International Conference on Infrared and Millimeter Waves (IRMMW2003), 29. September - 3. Oktober 2003, Otsu, Shiga, Japan.
Volltext nicht vorhanden.
Tarasenko, Sergey,
Perel', V.,
Yassievich, I.,
Ganichev, Sergey,
Belkov, Vassilij und
Prettl, Wilhelm
(2003)
Spin infection by electron tunnelling through a semiconductor barrier.
In: 11th International Symposium Nanostructures: Physics and Technology, 23. – 28. Juni 2003, St. Petersburg, Russia.
Volltext nicht vorhanden.
Tarasenko, Sergey,
Perel', V.,
Yassievich, I.,
Ganichev, Sergey,
Belkov, Vassilij und
Prettl, Wilhelm
(2003)
Spin injection by electron tunnelling through a semiconductor barrier.
In:
Alferov, Zh. und
Esaki, L., (eds.)
Proceedings of 11th International Symposium NANOSTRUCTURES: Physics and Technology.
Ioffe Institut, St. Petersburg, S. 281.
ISBN 5-93634-009-0.
Volltext nicht vorhanden.
Ganichev, Sergey,
Dmitriev, A.,
Emel'yanov, S.,
Terent'ev, Y.,
Yaroshetskii, I. und
Yassievich, I.
(1988)
Light impact ionization in InSb.
In: 3rd Conference on Physics and Technology of GaAs and other A3-B5 Semiconductors, 28. November - 02. Dezember 1988, Tatranska Lomnisa.
Volltext nicht vorhanden.
Ganichev, Sergey,
Dmitriev, A.,
Emel'yanov, S.,
Terent'ev, Y.,
Yaroshetskii, I. und
Yassievich, I.
(1986)
Impact ionization in semiconductors under the influence of the electric field of an optical wave.
Soviet physics JETP 63 (2), S. 256-263.
Ganichev, Sergey,
Dmitriev, A.,
Emel'yanov, S.,
Terent'ev, Y.,
Yaroshetskii, I. und
Yassievich, I.
(1986)
Impact ionization in semiconductors under the influence of the electric field of an optical wave.
In: 6th Soviet Conference on Plasma and Current Instabilities in Semiconductors, 1986, Vilnus, USSR.
Volltext nicht vorhanden.
Ganichev, Sergey,
Dmitriev, A.,
Emel'yanov, S.,
Terent'ev, Y.,
Yaroshetskii, I. und
Yassievich, I.
(1986)
To the question of impact ionization in p-type InSb.
In: 6th Soviet Conference on Plasma and Current Instabilities in Semiconductors, 1986, Vilnus, USSR.
Volltext nicht vorhanden.
Ganichev, Sergey,
Dmitriev, A.,
Emel'yanov, S.,
Terent'ev, Y.,
Yaroshetskii, I. und
Yassievich, I.
(1984)
Impact ionization in a semiconductor in a light wave.
JETP Letters 40 (5), S. 948-951.
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