Entries of Zeisel, R. on the publication server

De Santi, C., Meneghini, M., La Grassa, M., Galler, B., Zeisel, R., Goano, M., Dominici, S., Mandurrino, M., Bertazzi, F., Robidas, D., Meneghesso, G. and Zanoni, E. (2016) Role of defects in the thermal droop of InGaN-based light emitting diodes. Journal of Applied Physics 119 (9), 094501. Fulltext not available.

Nirschl, A., Binder, M., Schmid, M., Karow, M. M. , Pietzonka, I., Lugauer, H.-J., Zeisel, R., Bougeard, Dominique, Galler, B. and make_name_string expected hash reference (2015) Transport and capture properties of Auger-generated high-energy carriers in (AllnGa)N Quantum well structures. Journal of Applied Physics 118, 033103.

Binder, M., Nirschl, A., Zeisel, R., Hager, T., Lugauer, H.-J., Sabathil, M., Bougeard, Dominique, Wagner, J. and Galler, B. (2013) Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence. Applied Physics Letters 103, 071108.