["viewname_eprint_historical_projects" not defined]

Witzigmann, B., Laino, V., Roemer, F., Lauterbach, C., Schwarz, Uli, Rumbolz, C., Schillgalies, M., Lell, A. and Härle, V. (2007) Analysis of substrate modes in GaN/InGaN Lasers. SPIE proceedings 6468, 64680Q. Fulltext not available.

Kojima, K., Funato, M., Kawakami, Y., Braun, Harald, Schwarz, Uli, Nagahama, S. and Mukai, T. (2007) Comparison between optical gain spectra of InxGa1-xN/In0.02Ga0.98N laser diodes emitting at 404 nm and 470 nm. phys. stat. sol. (a) 204, p. 2108. Fulltext not available.

Braun, Harald, Lauterbach, C., Schwarz, Uli, Laino, V., Witzigmann, B., Rumbolz, C., Schillgalies, M., Lell, A. and Härle, V. (2007) Experimental and Theoretical Study of Substrate Modes in (Al,In)GaN Laser Diodes. phys. stat. sol. (c) 4, p. 2772. Fulltext not available.

Laino, V., Roemer, F., Witzigmann, B., Lauterbach, C., Schwarz, Uli, Rumbolz, C., Schillgalies, M., Furitsch, M., Lell, A. and Här, V. (2007) Experimental and theoretical study of substrate modes in (Al,In)GaN laser diodes. IEEE J. Quantum Electronics 43, p. 16. Fulltext not available.

Schwarz, Uli, Braun, Harald, Kojima, K., Kawakami, Y., Nagahama, S. and Mukai, T. (2007) Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells. Applied Physics Letters 91, p. 123503. Fulltext not available.

Schwarz, Uli, Braun, Harald, Kojima, K., Funato, M., Kawakami, Y., Nagahama, S. and Mukai, T. (2007) Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375 nm to 470 nm spectral range. SPIE proceedings 6485, p. 648506. Fulltext not available.

Vierheilig, Clemens, Braun, Harald, Schwarz, Uli, Wegscheider, Werner, Baur, E., Strauß, U. and Härle, V. (2007) Lateral Diffusion of Photogenerated Carriers in InGaN/GaN-heterostructures Observed by PL Measurements. phys. stat. sol. (c) 4, p. 2362. Fulltext not available.

Laubsch, A., Sabathil, M., Bruederl, G., Wagner, J., Strassburg, M., Baur, E., Braun, Harald, Schwarz, Uli, Lell, A., Lutgen, S., Linder, N., Oberschmid, R. and Hahn, B. (2007) Measurement of the internal quantum efficiency of InGaN quantum wells. Proc. SPIE 6486, 64860J. Fulltext not available.

Swietlik, T., Franssen, G., Czernecki, R., Leszczynski, M., Skierbiszewski, C., Grzegory, I., Bohdan, R., Trzeciakowski, W., Suski, T., Perlin, P., Lauterbach, C. and Schwarz, Uli (2007) Mode dynamics of high power (InAl)GaN based laser diodes grown on bulk GaN substrate. Journal of Appli ed Physics 101, 083109. Fulltext not available.

Schwarz, Uli and Witzigmann, B. (2007) Nitride Semiconductor Devices. In: Optical properties of edge-emitting lasers: measurement and simulation. Wiley-VCH. Fulltext not available.

Schwarz, Uli and Kneissl, M. (2007) Nitride emitters go nonpolar. phys. stat. solidi (RRL) 1, A44. Fulltext not available.

Kojima, K., Schwarz, Uli, Funato, M., Kawakami, Y., Nagahama, S. and Mukai, T. (2007) Optical gain spectra for near UV to aquamarine (Al,In)GaN laser diodes. Optics Express 15, p. 7730. Fulltext not available.

Schwarz, Uli (2007) Pattern formation and directional and spatial ordering of edge dislocations in bulk GaN: Micro-photoluminescence spectra and continuum elastic calculations. Physical Review B 75, p. 245213.

Gmeinwieser, N. and Schwarz, Uli (2007) Strain of single edge dislocations in bulk GaN. Physica Status Solidi (B). Fulltext not available.

Vierheilig, Clemens, Braun, Harald, Schwarz, Uli, Wegscheider, Werner, Baur, E., Strauß, U. and Härle, V. (2007) Temperature- and excitation density dependency of photoluminescence spectra in InGaN/GaN-heterostructures. phys. stat. sol. (c) 4, p. 179. Fulltext not available.

Engl, Karl, Beer, Martin, Gmeinwieser, Nikolaus, Schwarz, Ulrich, Zweck, Josef, Wegscheider, Werner, Miller, S., Miler, A., Lugauer, H., Brüderl, G., Lell, A. and Härle, V. (2006) Influence of an in situ-deposited SiN_x intermediate layer inside GaN and AlGaN layers on SiC substrates. Journal of Crystal Growth 289 (1), pp. 6-13. Fulltext restricted.

Witzigmann, B., Laino, V., Luisier, M., Schwarz, Uli, Feicht, Georg, Wegscheider, Werner, Engl, K., Furitsch, M., Leber, A., Lell, A. and Härle, V. (2006) Microscopic analysis of optical gain in InGaN/GaN quantum wells. Applied Physics Letters 88, 021104. Fulltext restricted.

Witzigmann, B., Laino, V., Luisier, M., Schwarz, Uli, Fischer, H., Feicht, Georg, Wegscheider, Werner, Rumbolz, C., Lell, A. and Härle, V. (2006) Analysis of temperature dependent optical gain in GaN/InGaN quantum well structures. IEEE Phot. Tech. Lett. 18, p. 1600. Fulltext not available.

Witzigmann, B., Laino, V., Luisier, M., Feicht, Georg and Schwarz, Uli (2006) Simulation and design of optical gain in In(Al)GaN/GaN short wavelength lasers. SPIE proceedings 6184, 61840E. Fulltext not available.

Pindl, M. and Schwarz, Uli (2006) Waveguide mode dynamics of blue laser diodes. phys. stat. sol. (a) 203, p. 1787. Fulltext not available.

Gmeinwieser, N., Gottfriedsen, P., Schwarz, Uli, Wegscheider, Werner, Clos, R., Krtschil, A., Krost, A., Weimar, A., Brüderl, G., Lell, A. and Härle, V. (2005) Single dislocation induced strain in GaN. Journal of Appli ed Physics 98, p. 116102. Fulltext not available.