Einträge von Emel'yanov, S. auf dem Publikationsserver

Ganichev, Sergey, Emel'yanov, S., Terent'ev, Y. und Yaroshetskii, I. (1989) On the domain of application of fast submillimeter detectors cooled to T=77 K. Soviet physics: Solid state 34 (5), S. 565-566.

Ganichev, Sergey, Emel'yanov, S. und Yaroshetskii, I. (1987) Intraband photoconductivity due to light holes and heating of carriers in p-type Ge by submillimeter laser excitation. Semiconductors 21 (6), S. 618-620.

Ganichev, Sergey, Emel'yanov, S., Ivchenko, E., Perlin, E., Terent'ev, Y., Fedorov, A. und Yaroshetskii, I. (1986) Multiphoton absorption in semiconductors at submillimeter wavelengths. Soviet physics JETP 64 (4), S. 729-737.

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. und Yassievich, I. (1986) Impact ionization in semiconductors under the influence of the electric field of an optical wave. Soviet physics JETP 63 (2), S. 256-263.

Ganichev, Sergey, Emel'yanov, S., Pakhomov, A., Terent'ev, Y. und Yaroshetskii, I. (1985) Fast uncooled detector for far-IR and submillimeter laser beams. Soviet technical physics letters 11 (8), S. 377-378.

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. und Yassievich, I. (1984) Impact ionization in a semiconductor in a light wave. JETP Letters 40 (5), S. 948-951.

Ganichev, Sergey, Emel'yanov, S., Terent'ev, Y. und Yaroshetskii, I. (1984) Drag of carriers by photons under conditions of multiphoton absorption of submillimeter radiation in p-type germanium. Semiconductors 18 (2), S. 164-166.

Ganichev, Sergey, Emel'yanov, S. und Yaroshetskii, I. (1983) Dynamic change in the photoconductivity sign in n-Ge in intense submillimeter radiation. JETP Letters 38 (8), S. 448-451.

Ganichev, Sergey, Emel'yanov, S., Ivchenko, E., Perlin, E. und Yaroshetskii, I. (1983) Multiphoton absorption in p-Ge in the submillimeter range. JETP Letters 37 (10), S. 568-570.

Ganichev, Sergey, Emel'yanov, S. und Yaroshetskii, I. (1983) Drag of carriers by photons in semiconductors in the far infrared and submillimeter spectral ranges. Semiconductors 17 (4), S. 436-439.

Ganichev, Sergey, Emel'yanov, S. und Yaroshetskii, I. (1982) Spectral sign inversion of photon drag at far-IR wavelengths. JETP Letters 35 (7), S. 368-371.

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. und Yassievich, Irina (1988) Light impact ionization in semiconductors. In: Zawadzki, Włodzimierz, (ed.) 19th International Conference on the Physics of Semiconductors. Band 2: Warsaw, Poland, Aug. 15-19, 1988. Institute of Physics, Polish Academy of Sciences, Warsaw, S. 1373-1376. ISBN 83-00-02465-4.

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. und Yassievich, I. (1988) Light impact ionization in InSb. In: 3rd Conference on Physics and Technology of GaAs and other A3-B5 Semiconductors, 28. November - 02. Dezember 1988, Tatranska Lomnisa. Volltext nicht vorhanden.

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. und Yassievich, Irina (1988) Light impact ionization in semiconductors. In: 19th International Conference on the Physics of Semiconductors, 15. - 19. August 1988, Warsaw, Poland. Volltext nicht vorhanden.

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. und Yassievich, I. (1986) Impact ionization in semiconductors under the influence of the electric field of an optical wave. In: 6th Soviet Conference on Plasma and Current Instabilities in Semiconductors, 1986, Vilnus, USSR. Volltext nicht vorhanden.

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. und Yassievich, I. (1986) To the question of impact ionization in p-type InSb. In: 6th Soviet Conference on Plasma and Current Instabilities in Semiconductors, 1986, Vilnus, USSR. Volltext nicht vorhanden.

Ganichev, Sergey, Emel'yanov, S., Pakhomov, A., Terent'ev, Y. und Yaroshetskii, I. (1985) Fast uncooled detector for far-IR and submillimeter laser beams on the base of intraband photoconductivity. In: 5th Soviet Conference on Photometric and its Metrological Providence, 1985, Moscow, USSR. Volltext nicht vorhanden.

Ganichev, Sergey, Emel'yanov, S., Ivchenko, E., Perlin, E. und Yaroshetskii, I. (1985) Multiphoton absorption in p-Ge in the submillimeter range. In: 12th Soviet Conference on Coherent and Nonlinear Optics 2, 1985, Moscow, USSR. Volltext nicht vorhanden.

Ganichev, Sergey, Emel'yanov, S., Ivchenko, E., Perlin, E., Terent'ev, Y., Fedorov, A. und Yaroshetskii, I. (1985) New type of nonlinear absorption in semiconductors. In: 10th Soviet Conference on the Physics of Semiconductors 2, 1985, Minsk, USSR. Volltext nicht vorhanden.

Ganichev, Sergey, Emel'yanov, S. und Yaroshetskii, I. (1984) Intraband photoconductivity and relaxation processes in p-type Ge by submillimeter laser excitation. In: 6th Soviet Conference on Nonresonant Interaction of Radiation with Matter, 1984, Palanga, USSR. Volltext nicht vorhanden.

Ganichev, Sergey, Emel'yanov, S., Ivchenko, E., Perlin, E. und Yaroshetskii, I. (1984) Multiphoton absorption in p-Ge in the submillimeter range. In: 6th Soviet Conference on Nonresonant Interaction of Radiation with Matter, 1984, Palanga, USSR. Volltext nicht vorhanden.

Ganichev, Sergey, Emel'yanov, S. und Yaroshetskii, I. (1983) Light electron heating in semiconductors with degenerate band structure under the action of submillimeter radiation. In: 5th Soviet Conference on Plasma and Current Instabilities in Semiconductors, 1983, Vilnus, USSR. Volltext nicht vorhanden.

Ganichev, Sergey, Emel'yanov, S. und Yaroshetskii, I. (1982) Drag of carriers by photons in semiconductors in the far infrared and submillimeter spectral ranges. In: 9th Soviet Conference on the Physics of Semiconductors, 1982, Baku, USSR. Volltext nicht vorhanden.