Entries of Emel'yanov, S. on the publication server

Ganichev, Sergey, Emel'yanov, S., Terent'ev, Y. and Yaroshetskii, I. (1989) On the domain of application of fast submillimeter detectors cooled to T=77 K. Soviet physics: Solid state 34 (5), pp. 565-566.

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. and Yassievich, I. (1988) Light impact ionization in InSb. In: 3rd Conference on Physics and Technology of GaAs and other A3-B5 Semiconductors, 28. November - 02. Dezember 1988, Tatranska Lomnisa. Fulltext not available.

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. and Yassievich, Irina (1988) Light impact ionization in semiconductors. In: Zawadzki, Włodzimierz, (ed.) 19th International Conference on the Physics of Semiconductors. Band 2: Warsaw, Poland, Aug. 15-19, 1988. Institute of Physics, Polish Academy of Sciences, Warsaw, pp. 1373-1376. ISBN 83-00-02465-4.

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. and Yassievich, Irina (1988) Light impact ionization in semiconductors. In: 19th International Conference on the Physics of Semiconductors, 15. - 19. August 1988, Warsaw, Poland. Fulltext not available.

Ganichev, Sergey, Emel'yanov, S. and Yaroshetskii, I. (1987) Intraband photoconductivity due to light holes and heating of carriers in p-type Ge by submillimeter laser excitation. Semiconductors 21 (6), pp. 618-620.

Ganichev, Sergey, Emel'yanov, S., Ivchenko, E., Perlin, E., Terent'ev, Y., Fedorov, A. and Yaroshetskii, I. (1986) Multiphoton absorption in semiconductors at submillimeter wavelengths. Soviet physics JETP 64 (4), pp. 729-737.

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. and Yassievich, I. (1986) Impact ionization in semiconductors under the influence of the electric field of an optical wave. Soviet physics JETP 63 (2), pp. 256-263.

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. and Yassievich, I. (1986) Impact ionization in semiconductors under the influence of the electric field of an optical wave. In: 6th Soviet Conference on Plasma and Current Instabilities in Semiconductors, 1986, Vilnus, USSR. Fulltext not available.

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. and Yassievich, I. (1986) To the question of impact ionization in p-type InSb. In: 6th Soviet Conference on Plasma and Current Instabilities in Semiconductors, 1986, Vilnus, USSR. Fulltext not available.

Ganichev, Sergey, Emel'yanov, S., Pakhomov, A., Terent'ev, Y. and Yaroshetskii, I. (1985) Fast uncooled detector for far-IR and submillimeter laser beams. Soviet technical physics letters 11 (8), pp. 377-378.

Ganichev, Sergey, Emel'yanov, S., Pakhomov, A., Terent'ev, Y. and Yaroshetskii, I. (1985) Fast uncooled detector for far-IR and submillimeter laser beams on the base of intraband photoconductivity. In: 5th Soviet Conference on Photometric and its Metrological Providence, 1985, Moscow, USSR. Fulltext not available.

Ganichev, Sergey, Emel'yanov, S., Ivchenko, E., Perlin, E. and Yaroshetskii, I. (1985) Multiphoton absorption in p-Ge in the submillimeter range. In: 12th Soviet Conference on Coherent and Nonlinear Optics 2, 1985, Moscow, USSR. Fulltext not available.

Ganichev, Sergey, Emel'yanov, S., Ivchenko, E., Perlin, E., Terent'ev, Y., Fedorov, A. and Yaroshetskii, I. (1985) New type of nonlinear absorption in semiconductors. In: 10th Soviet Conference on the Physics of Semiconductors 2, 1985, Minsk, USSR. Fulltext not available.

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. and Yassievich, I. (1984) Impact ionization in a semiconductor in a light wave. JETP Letters 40 (5), pp. 948-951.

Ganichev, Sergey, Emel'yanov, S., Terent'ev, Y. and Yaroshetskii, I. (1984) Drag of carriers by photons under conditions of multiphoton absorption of submillimeter radiation in p-type germanium. Semiconductors 18 (2), pp. 164-166.

Ganichev, Sergey, Emel'yanov, S. and Yaroshetskii, I. (1984) Intraband photoconductivity and relaxation processes in p-type Ge by submillimeter laser excitation. In: 6th Soviet Conference on Nonresonant Interaction of Radiation with Matter, 1984, Palanga, USSR. Fulltext not available.

Ganichev, Sergey, Emel'yanov, S., Ivchenko, E., Perlin, E. and Yaroshetskii, I. (1984) Multiphoton absorption in p-Ge in the submillimeter range. In: 6th Soviet Conference on Nonresonant Interaction of Radiation with Matter, 1984, Palanga, USSR. Fulltext not available.

Ganichev, Sergey, Emel'yanov, S. and Yaroshetskii, I. (1983) Dynamic change in the photoconductivity sign in n-Ge in intense submillimeter radiation. JETP Letters 38 (8), pp. 448-451.

Ganichev, Sergey, Emel'yanov, S., Ivchenko, E., Perlin, E. and Yaroshetskii, I. (1983) Multiphoton absorption in p-Ge in the submillimeter range. JETP Letters 37 (10), pp. 568-570.

Ganichev, Sergey, Emel'yanov, S. and Yaroshetskii, I. (1983) Drag of carriers by photons in semiconductors in the far infrared and submillimeter spectral ranges. Semiconductors 17 (4), pp. 436-439.

Ganichev, Sergey, Emel'yanov, S. and Yaroshetskii, I. (1983) Light electron heating in semiconductors with degenerate band structure under the action of submillimeter radiation. In: 5th Soviet Conference on Plasma and Current Instabilities in Semiconductors, 1983, Vilnus, USSR. Fulltext not available.

Ganichev, Sergey, Emel'yanov, S. and Yaroshetskii, I. (1982) Spectral sign inversion of photon drag at far-IR wavelengths. JETP Letters 35 (7), pp. 368-371.

Ganichev, Sergey, Emel'yanov, S. and Yaroshetskii, I. (1982) Drag of carriers by photons in semiconductors in the far infrared and submillimeter spectral ranges. In: 9th Soviet Conference on the Physics of Semiconductors, 1982, Baku, USSR. Fulltext not available.