Anzahl der Einträge: 4.
2016
De Santi, C.,
Meneghini, M.,
La Grassa, M.,
Galler, B.,
Zeisel, R.,
Goano, M.,
Dominici, S.,
Mandurrino, M.,
Bertazzi, F.,
Robidas, D.,
Meneghesso, G. und
Zanoni, E.
(2016)
Role of defects in the thermal droop of InGaN-based light emitting diodes.
Journal of Applied Physics 119 (9), 094501.
Volltext nicht vorhanden.
2015
Nirschl, A.,
Binder, M.,
Schmid, M.,
Karow, M. M.,
Pietzonka, I.,
Lugauer, H.-J.,
Zeisel, R.,
Bougeard, Dominique und
Galler, B.
(2015)
Transport and capture properties of Auger-generated high-energy carriers in (AllnGa)N Quantum well structures.
Journal of Applied Physics 118, 033103.
2013
Binder, M.,
Nirschl, A.,
Zeisel, R.,
Hager, T.,
Lugauer, H.-J.,
Sabathil, M.,
Bougeard, Dominique,
Wagner, J. und
Galler, B.
(2013)
Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence.
Applied Physics Letters 103, 071108.
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