Anzahl der Einträge: 6.
1995
Beregulin, E.,
Ganichev, Sergey,
Gloukh, K.,
Gusev, G.,
Kvon, Z.,
Martisov, M.,
Shik, A. und
Yaroshetskii, I.
(1995)
Rapid submillimeter photoconductivity and energy relaxation of a two-dimensional electron gas near the surface of silicon.
In:
Levinštejn, Michail E., (ed.)
Best of Soviet semiconductor physics and technology, 1989 - 1990.
World Scientific, Singapore, S. 382.
ISBN 981-021579-7.
Volltext nicht vorhanden.
1993
Beregulin, E.,
Ganichev, Sergey,
Gloukh, K.,
Gusev, G.,
Kvon, Z.,
Martisov, M.,
Shik, A. und
Yaroshetskii, I.
(1993)
Rapid submillimeter photoconductivity and energy relaxation of a two-dimensional electron gas near the surface of silicon.
In: 8th International Conference on Hot Carierrs in Semiconductors, 16. - 20. August 1993, Oxford, UK.
Volltext nicht vorhanden.
1990
Beregulin, E.,
Ganichev, Sergey,
Gloukh, K.,
Gusev, G.,
Kvon, Z.,
Martisov, M.,
Shik, A. und
Yaroshetskii, I.
(1990)
Rapid submillimeter photoconductivity and energy relaxation of a two-dimensional electron gas near the surface of silicon.
Journal of experimental and theoretical physics: JETP 70 (6), S. 1138.
Volltext nicht vorhanden.
1989
Beregulin, E.,
Ganichev, Sergey,
Gloukh, K.,
Gusev, G.,
Kvon, Z.,
Martisov, M.,
Shik, A. und
Yaroshetskii, I.
(1989)
Rapid submillimeter photoconductivity of a two-dimensional electron gas near the surface of silicon.
In: 3rd Seminar on the electron processes in two-dimensional systems, 1989, Novosibirsk, USSR.
Volltext nicht vorhanden.
1988
Beregulin, E.,
Ganichev, Sergey,
Gloukh, K.,
Gusev, G.,
Kvon, Z.,
Martisov, M.,
Shik, A. und
Yaroshetskii, I.
(1988)
Submillimeter photoconductivity in inversion layers at a silicon surface.
JETP Letters 48 (5), S. 269-272.
Beregulin, E.,
Ganichev, Sergey,
Gloukh, K.,
Gusev, G.,
Kvon, Z.,
Martisov, M.,
Shik, A. und
Yaroshetskii, I.
(1988)
The nature of submillimeter photoconductivity in 2DEG at a silicon surface.
In: 11th Soviet Conference on the Physics of Semiconductors, 1988, Kishinev, USSR.
Volltext nicht vorhanden.
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