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Publications by Sabathil, M.

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Jump to: 2014 | 2013 | 2007 | 2004
Number of items: 4.

2014

Nirschl, Anna, Gomez-Iglesias, Alvaro, Sabathil, M., Hartung, Georg, Off, Jürgen and Bougeard, Dominique (2014) Quantitative modeling of the temperature-dependent internal Quantum Efficiency in InGaN light emitting diodes. Phys. Status Solidi A.

2013

Binder, M., Nirschl, A., Zeisel, R., Hager, T., Lugauer, H. - J., Sabathil, M., Bougeard, Dominique, Wagner, J. and Galler, B. (2013) Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence. Applied Physics Letters 103, 071108.

2007

Laubsch, A., Sabathil, M., Bruederl, G., Wagner, J., Strassburg, M., Baur, E., Braun, Harald, Schwarz, Uli, Lell, A., Lutgen, S., Linder, N., Oberschmid, R. and Hahn, B. (2007) Measurement of the internal quantum efficiency of InGaN quantum wells. Proc. SPIE 6486, 64860J. Fulltext not available.

2004

Bougeard, Dominique, Tan, P. H., Sabathil, M., Vogl, P., Abstreiter, Gerhard and Brunner, K. (2004) Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots. Physica E 21, p. 312. Fulltext not available.

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