Go to content
UR Home

Publications by Sabathil, M.

Up a level
Export as
[feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: Date | Item type | No Grouping
Jump to: 2014 | 2013 | 2007 | 2004
Number of items: 4.


Nirschl, Anna, Gomez-Iglesias, Alvaro, Sabathil, M., Hartung, Georg, Off, Jürgen and Bougeard, Dominique (2014) Quantitative modeling of the temperature-dependent internal Quantum Efficiency in InGaN light emitting diodes. Phys. Status Solidi A.


Binder, M., Nirschl, A., Zeisel, R., Hager, T., Lugauer, H. - J., Sabathil, M., Bougeard, Dominique, Wagner, J. and Galler, B. (2013) Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence. Applied Physics Letters 103, 071108.


Laubsch, A., Sabathil, M., Bruederl, G., Wagner, J., Strassburg, M., Baur, E., Braun, Harald, Schwarz, Uli, Lell, A., Lutgen, S., Linder, N., Oberschmid, R. and Hahn, B. (2007) Measurement of the internal quantum efficiency of InGaN quantum wells. Proc. SPIE 6486, 64860J. Fulltext not available.


Bougeard, Dominique, Tan, P. H., Sabathil, M., Vogl, P., Abstreiter, Gerhard and Brunner, K. (2004) Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots. Physica E 21, p. 312. Fulltext not available.

This list was generated on Sun Feb 23 15:52:26 2020 CET.
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons