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Publications by Waag, A.

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Jump to: 2016
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Mohajerani, M. S., Khachadorian, S., Schimpke, T., Nenstiel, C., Hartmann, J., Ledig, J., Avramescu, A., Strassburg, M., Hoffmann, A. and Waag, A. (2016) Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si micro-rods by micro-Raman spectroscopy. Applied Physics Letters 108 (9), 091112. Fulltext not available.

Yu, F., Rümmler, D., Hartmann, J., Caccamo, L., Schimpke, T., Strassburg, M., Gad, A. E., Bakin, A., Wehmann, H.-H., Witzigmann, B., Wasisto, H. S. and Waag, A. (2016) Vertical architecture for enhancement mode power transistors based on GaN nanowires. Applied Physics Letters 108 (21), p. 213503. Fulltext not available.

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