![]() | Up a level |
Bock, W. and Prettl, Wilhelm (1989) Nonlinear effects and transient response of interband and subgap photoconductivity in polycrystalline silicon. Journal of Applied Physics 66 (9), p. 4372.
Bock, W. and Prettl, Wilhelm (1988) Optical detection up to 2.5 Gbit/s with a standard high-speed self-aligned silicon bipolar transistor. Electronics Letters 24 (13), pp. 808-810.
Bock, W. and Treitinger, L. and Prettl, Wilhelm (1988) High-speed optical detection up to 2.5 Gbit/s with a double polysilicon self-aligned silicon bipolar transistor. Journal de Physique Colloques 49 (C4), pp. 89-92.
Bock, W. and Prettl, Wilhelm (1988) Nonlinear subgap photoconductivity of polycrystalline silicon. Applied Physics Letters 53 (2), p. 119.
Happek, U. and Bock, W. and Prettl, Wilhelm and Bernsdorf, S. and Braun, W. (1987) Transient infrared photoconductivity in GaP light-emitting diodes. In: Jahresbericht / BESSY. BESSY, Berlin, p. 228.
Bock, W. and Prettl, Wilhelm (1987) Subgap-photoconductivity of p-doped polysilicon. In: 17th European Solid State Device Research Conference, 14.-17. September 1987, Bologna, Italien.