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Gmeinwieser, N. and Schwarz, Uli (2007) Strain of single edge dislocations in bulk GaN. Physica Status Solidi (B).

Gmeinwieser, N. and Gottfriedsen, P. and Schwarz, Uli and Wegscheider, Werner and Clos, R. and Krtschil, A. and Krost, A. and Weimar, A. and Brüderl, G. and Lell, A. and Härle, V. (2005) Single dislocation induced strain in GaN. Journal of Appli ed Physics 98, p. 116102.

Gmeinwieser, N. and Engl, K. and Gottfriedsen, P. and Schwarz, Uli and Zweck, Josef and Wegscheider, Werner and Miller, S. and Lugauer, H. and Leber, A. and Lell, A. and Härle, V. (2004) Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrate. Journal of Appli ed Physics 96, J. Appl. Phys..

Gmeinwieser, N. and Engl, K. and Schwarz, Uli and Zweck, Josef and Wegscheider, Werner and Miller, S. and Leber, A. and Lell, A. and Härle, V. (2004) Strain, wing tilt and Photoluminescence in ELOG GaN on SiC substrates. phys. stat. sol. (a) 201, p. 2760.

Kümmler, V. and Brüderl, G. and Bader, S. and Miller, S. and Weimar, A. and Lell, A. and Härle, V. and Schwarz, Uli and Gmeinwieser, N. and Wegscheider, Werner (2002) Degradation Analysis of InGaN Laser Diodes. phys. stat. sol. (a) 194, p. 419.

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