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Nirschl, A. and Binder, M. and Schmid, M. and Karow, M. M. and Pietzonka, I. and Lugauer, H.-J. and Zeisel, R. and Bougeard, Dominique and Galler, B. (2015) Transport and capture properties of Auger-generated high-energy carriers in (AllnGa)N Quantum well structures. Journal of Applied Physics 118, 033103.
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Engl, Karl and Beer, Martin and Gmeinwieser, Nikolaus and Schwarz, Ulrich and Zweck, Josef and Wegscheider, Werner and Miller, Stephan and Miler, A. and Lugauer, H.-J. and Brüderl, G. and Lell, Alfred and Härle, Volker (2006) Influence of an in situ-deposited SiNx intermediate layer inside GaN and AlGaN layers on SiC substrates. Journal of Crystal Growth 289 (1), pp. 6-13. Fulltext restricted.
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Gmeinwieser, Nikolaus and Engl, Karl and Gottfriedsen, P. and Schwarz, Ulrich and Zweck, Josef and Wegscheider, Werner and Miller, S. and Lugauer, H.-J. and Leber, A. and Weimar, A. and Lell, Alfred and Härle, Volker (2004) Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates. Journal of Applied Physics 96 (7), pp. 3666-3672. Fulltext restricted.
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