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Engl, Karl and Beer, Martin and Gmeinwieser, Nikolaus and Schwarz, Ulrich and Zweck, Josef and Wegscheider, Werner and Miller, Stephan and Miler, A. and Lugauer, H.-J. and Brüderl, G. and Lell, Alfred and Härle, Volker (2006) Influence of an in situ-deposited SiNx intermediate layer inside GaN and AlGaN layers on SiC substrates. Journal of Crystal Growth 289 (1), pp. 6-13.

Engl, Karl and Beer, Martin and Gmeinwieser, Nikolaus and Schwarz, Ulrich and Zweck, Josef and Wegscheider, Werner and Miller, S. and Miler, A. and Lugauer, H. and Brüderl, G. and Lell, A. and Härle, V. (2006) Influence of an in situ-deposited SiN_x intermediate layer inside GaN and AlGaN layers on SiC substrates. Journal of Crystal Growth 289 (1), pp. 6-13.

Schoedl, T. and Schwarz, Uli and Kümmler, V. and Furitsch, M. and Leber, A. and Miler, A. and Lell, A. and Härle, V. (2005) Facet degradation of GaN heterostructure laser diodes. Journal of Appli ed Physics 97, p. 123102.

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