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Number of items: 6.

Article

Shul'man, A. and Ganichev, Sergey and Kotel'nikov, I. and Dizhur, E. and Prettl, Wilhelm and Ormont, A. and Fedorov, Y. and Zepezauer, E. (1999) Near-zone field effect of FIR laser radiation on tunnel current through the Schottky barrier under plasma reflection condition. physica status solidi (a) 175 (1), pp. 289-296.

Book Section

Shul'man, A. and Kotel'nikov, I. and Ganichev, Sergey and Dizhur, E. and Ormont, A. and Zepezauer, E. and Prettl, Wilhelm (1999) Near field enhancement of photoresistive effect in n-GaAs tunnel Schottky junctions. In: Gershoni, David, (ed.) 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998. World Scientific, Singapore, Th-P58. ISBN 981-02-4030-9.

Conference or Workshop Item

Shul'man, A. and Ganichev, Sergey and Kotel'nikov, I. and Dizhur, E. and Prettl, Wilhelm and Ormont, A. and Fedorov, Y. and Zepezauer, E. (1999) Near-zone field effect of FIR laser radiation on tunnel current through the Schottky barrier under plasma reflection condition. In: Workshop on Surface and Interface Optics '99 (SIO'99), 04. - 08. Mai 1999, Sainte-Maxime, France.

Zepezauer, E. and Shul'man, A. and Kotel'nikov, I. and Ganichev, Sergey and Ormont, A. and Prettl, Wilhelm (1998) Nahfeld-Verstaerkung des photoresistiven Effektes in n-GaAs/Al-Schottky-Tunnelkontakten. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1998, Regensburg.

Shul'man, A. and Kotel'nikov, I. and Ganichev, Sergey and Dizhur, E. and Ormont, A. and Zepezauer, E. and Prettl, Wilhelm (1998) Near field enhancement of photoresistive effect in n-GaAs tunnel Schottky junctions. In: 24th International Conference on the Physics of Semiconductors, 02. - 07. August 1998, Jerusalem, Israel.

Shul'man, A. and Kotel'nikov, I. and Ganichev, Sergey and Ormont, A. and Varvanin, N. and Prettl, Wilhelm (1997) Giant nonlinearity of photoresistive effect in n-GaAs/Al tunnel junctions with micro- inhomogeneties of metal electrode. In: 3rd Russian conference on semiconductor physics "Semiconductors-97", 01. - 05. Dezember 1997, Moskau, Russland.

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