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Article

Shul'man, A. and Ganichev, Sergey and Kotel'nikov, I. and Dizhur, E. and Prettl, Wilhelm and Ormont, A. and Fedorov, Y. and Zepezauer, E. (1999) Near-zone field effect of FIR laser radiation on tunnel current through the Schottky barrier under plasma reflection condition. physica status solidi (a) 175 (1), pp. 289-296.
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Book Section

Shul'man, A. and Kotel'nikov, I. and Ganichev, Sergey and Dizhur, E. and Ormont, A. and Zepezauer, E. and Prettl, Wilhelm (1999) Near field enhancement of photoresistive effect in n-GaAs tunnel Schottky junctions. In: Gershoni, David, (ed.) 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998. World Scientific, Singapore, Th-P58. ISBN 981-02-4030-9.
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Conference or Workshop Item

Shul'man, A. and Ganichev, Sergey and Kotel'nikov, I. and Dizhur, E. and Prettl, Wilhelm and Ormont, A. and Fedorov, Y. and Zepezauer, E. (1999) Near-zone field effect of FIR laser radiation on tunnel current through the Schottky barrier under plasma reflection condition. In: Workshop on Surface and Interface Optics '99 (SIO'99), 04. - 08. Mai 1999, Sainte-Maxime, France. Fulltext not available.

Zepezauer, E. and Shul'man, A. and Kotel'nikov, I. and Ganichev, Sergey and Ormont, A. and Prettl, Wilhelm (1998) Nahfeld-Verstaerkung des photoresistiven Effektes in n-GaAs/Al-Schottky-Tunnelkontakten. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1998, Regensburg. Fulltext not available.

Shul'man, A. and Kotel'nikov, I. and Ganichev, Sergey and Dizhur, E. and Ormont, A. and Zepezauer, E. and Prettl, Wilhelm (1998) Near field enhancement of photoresistive effect in n-GaAs tunnel Schottky junctions. In: 24th International Conference on the Physics of Semiconductors, 02. - 07. August 1998, Jerusalem, Israel. Fulltext not available.

Shul'man, A. and Kotel'nikov, I. and Ganichev, Sergey and Ormont, A. and Varvanin, N. and Prettl, Wilhelm (1997) Giant nonlinearity of photoresistive effect in n-GaAs/Al tunnel junctions with micro- inhomogeneties of metal electrode. In: 3rd Russian conference on semiconductor physics "Semiconductors-97", 01. - 05. Dezember 1997, Moskau, Russland. Fulltext not available.

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