Anzahl der Einträge: 11.
2021
Mayer, Thomas,
Werner, Heiko,
Diaz-Pardo, R.,
Fujii, J.,
Vobornik, I.,
Back, Christian H. ,
Kronseder, Matthias und
Bougeard, Dominique
(2021)
Transport properties of band engineered p−n heterostructures of epitaxial Bi2Se3/(Bi1−xSbx)2(Te1−ySey)3 topological insulators.
Physical Review Materials 5, 014202.
Mayer, T.,
Werner, H.,
Schmid, F.,
Diaz-Pardo, R.,
Fujii, J.,
Vobornik, I.,
Back, C. H.,
Kronseder, M. und
Bougeard, D.
(2021)
Data Archive of Transport properties of band engineered p−n heterostructures of epitaxial Bi2Se3/(Bi1−xSbx)2(Te1−ySey)3 topological insulators.
[Datensatz]
2019
Pincelli, T.,
Cucini, R.,
Verna, A.,
Borgatti, F.,
Oura, M.,
Tamasaku, K.,
Osawa, H.,
Lee, T.-L.,
Schlueter, C.,
Günther, S.,
Back, C. H. ,
Dell’Angela, M.,
Ciprian, R.,
Orgiani, P. ,
Petrov, A.,
Sirotti, F.,
Dediu, V. A.,
Bergenti, I.,
Graziosi, P.,
Miletto Granozio, F.,
Tanaka, Y.,
Taguchi, M.,
Daimon, H.,
Fujii, J.,
Rossi, G. und
Panaccione, G.
(2019)
Transient quantum isolation and critical behavior in the magnetization dynamics of half-metallic manganites.
Physical Review B 100 (4).
Volltext nicht vorhanden.
2013
Fujii, J.,
Salles, B. R.,
Sperl, M.,
Ueda, S.,
Kobata, M.,
Kobayashi, K.,
Yamashita, Y.,
Torelli, P. ,
Utz, M.,
Fadley, C. S.,
Gray, A. X.,
Braun, J.,
Ebert, H.,
Di Marco, I. ,
Eriksson, O. ,
Thunström, P.,
Fecher, G. H.,
Stryhanyuk, H. ,
Ikenaga, E.,
Minár, J. ,
Back, C. H. ,
van der Laan, G. und
Panaccione, G.
(2013)
Identifying the Electronic Character and Role of the Mn States in the Valence Band of (Ga,Mn)As.
Physical Review Letters 111 (9).
Volltext nicht vorhanden.
2012
Gray, A. X.,
Minar, Jan,
Ueda, S.,
Stone, P. P.,
Yamashita, Y.,
Fujii, J.,
Braun, J.,
Plucinski, L.,
Schneider, C. M.,
Pannaccione, G.,
Ebert, Hubert,
Dubon, O. D.,
Kobayashi, K. und
Fadley, C. S.
(2012)
Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMnxAs through hard X-ray angle-resolved photoemission.
Nature Materials.
Volltext nicht vorhanden.
Torelli, P. ,
Sperl, Matthias,
Ciancio, R.,
Fujii, J.,
Rinaldi, C. ,
Cantoni, M. ,
Bertacco, R. ,
Utz, Martin,
Bougeard, Dominique,
Soda, Marcello,
Carlino, E. ,
Rossi, G.,
Back, Christian und
Panaccione, G.
(2012)
Growth of ultrathin epitaxial Fe/MgO spin injector on (0, 0, 1) (Ga, Mn)As.
Nanotechnology 23, S. 465202.
Volltext nicht vorhanden.
2011
Fujii, J.,
Sperl, Matthias,
Ueda, S.,
Kobayashi, K.,
Yamashita, Y.,
Kobata, M.,
Torelli, P. ,
Borgatti, F.,
Utz, M.,
Fadley, C. S.,
Gray, A. X.,
Monaco, G.,
Back, Christian ,
van der Laan, G. und
Panaccione, G.
(2011)
Identification of Different Electron Screening Behavior Between the Bulk and Surface of (Ga,Mn)As.
Phys. Rev. Lett. 107, S. 187203.
Volltext nicht vorhanden.
2009
Panaccione, G.,
Vobornik, I. ,
Fujii, J.,
Krizmancic, D.,
Annese, E. ,
Giovanelli, L.,
Maccherozzi, F.,
Salvador, F.,
De Luisa, A.,
Benedetti, D.,
Gruden, A.,
Bertoch, P.,
Polack, F.,
Cocco, D.,
Sostero, G.,
Diviacco, B.,
Hochstrasser, M.,
Maier, U.,
Pescia, D.,
Back, C. H. ,
Greber, T. ,
Osterwalder, J.,
Galaktionov, M.,
Sancrotti, M. und
Rossi, G.
(2009)
Advanced photoelectric effect experiment beamline at Elettra: A surface science laboratory coupled with Synchrotron Radiation.
Review of Scientific Instruments 80 (4).
Volltext nicht vorhanden.
2005
Giovanelli, L.,
Panaccione, G.,
Rossi, G.,
Fabrizioli, M.,
Tian, C.,
Gastelois, P.,
Fujii, J. und
Back, Christian
(2005)
Interface magnetization profiling by x-ray magnetometry of marker impurities on Fe/GaAs(001)-(4x6).
Applied Physics Letters 87, 042506.
Volltext nicht vorhanden.
Giovanelli, L.,
Panaccione, G.,
Rossi, G.,
Fabrizioli, M.,
Tian, C. S.,
Gastelois, P. L. ,
Fujii, J. und
Back, C. H.
(2005)
Interface magnetization profiling by x-ray magnetometry of marker impurities on Fe∕GaAs(001)-(4×6).
Applied Physics Letters 87 (4).
Volltext nicht vorhanden.
Giovanelli, L.,
Panaccione, G.,
Rossi, G.,
Fabrizioli, M.,
Tian, C.,
Gastelois, P. ,
Fujii, J. und
Back, Christian
(2005)
Layer-selective spectroscopy of Fe/GaAs(001): Influence of the interface on the magnetic properties.
Physical Review B (PRB) 72, 045221.
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