Entries of Thalmair, Johannes on the publication server

Scholz, Ferdinand, Schwaiger, Stephan, Däubler, Jürgen, Tischer, Ingo , Thonke, Klaus, Neugebauer, Silvio, Metzner, Sebastian, Bertram, Frank , Christen, Jürgen, Lengner, Holger, Thalmair, Johannes and Zweck, Josef (2012) Semipolar GaInN quantum well structures on large area substrates. physica status solidi (b) 249 (3), pp. 464-467. Fulltext not available.

Ploch, Simon, Wernicke, Tim, Thalmair, Johannes, Lohr, Matthias, Pristovsek, Markus , Zweck, Josef, Weyers, Markus and Kneissl, Michael (2012) Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy. Journal of Crystal Growth 356, pp. 70-74. Fulltext not available.

Schwaiger, Stephan, Metzner, Sebastian, Wunderer, Thomas, Argut, Ilona, Thalmair, Johannes, Lipski, Frank, Wieneke, Matthias, Bläsing, Jürgen, Bertram, Frank , Zweck, Josef, Krost, Alois, Christen, Jürgen and Scholz, Ferdinand (2011) Growth and coalescence behavior of semipolar GaN on pre‐structured r‐plane sapphire substrates. physica status solidi (b) 248 (3), pp. 588-593. Fulltext not available.

Jönen, H., Rossow, U., Bremers, H., Hoffmann, L., Brendel, M., Dräger, A. D., Schwaiger, S., Scholz, F., Thalmair, Johannes, Zweck, Josef and Hangleiter, A. (2011) Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells. Applied Physics Letters 99, 011901.

Jönen, Holger, Rossow, Uwe, Bremers, Heiko, Hoffmann, Lars, Brendel, Moritz, Dräger, Alexander Daniel, Metzner, Sebastian, Bertram, Frank , Christen, Jürgen, Schwaiger, Stephan, Scholz, Ferdinand, Thalmair, Johannes, Zweck, Josef and Hangleiter, Andreas (2011) Indium incorporation in GaInN/GaN quantum well structures on polar and nonpolar surfaces. physica status solidi (b) 248 (3), pp. 600-604. Fulltext not available.