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Gmeinwieser, Nikolaus and Gottfriedsen, P. and Schwarz, Ulrich and Wegscheider, Werner and Clos , R. and Krtschil, A. and Krost, A. and Engl, Karl and Weimar, A. and Brüderl, G. and Lell, Alfred and Härle, Volker (2006) Long range strain and electrical potential induced by single edge dislocations in GaN. Physica B Condensed Matter 376-37, pp. 451-454.
Gmeinwieser, N. and Gottfriedsen, P. and Schwarz, Uli and Wegscheider, Werner and Clos, R. and Krtschil, A. and Krost, A. and Weimar, A. and Brüderl, G. and Lell, A. and Härle, V. (2005) Single dislocation induced strain in GaN. Journal of Appli ed Physics 98, p. 116102.
Gmeinwieser, Nikolaus and Engl, Karl and Gottfriedsen, P. and Schwarz, Ulrich and Zweck, Josef and Wegscheider, Werner and Miller, S. and Lugauer, H.-J. and Leber, A. and Weimar, A. and Lell, Alfred and Härle, Volker (2004) Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates. Journal of Applied Physics 96 (7), pp. 3666-3672.
Kümmler, V. and Brüderl, G. and Bader, S. and Miller, S. and Weimar, A. and Lell, A. and Härle, V. and Schwarz, Ulrich and Gmeinwieser, Nikolaus and Wegscheider, Werner (2002) Degradation Analysis of InGaN Laser Diodes. physica status solidi a 194 (2), pp. 419-422.
Kümmler, V. and Brüderl, G. and Bader, S. and Miller, S. and Weimar, A. and Lell, A. and Härle, V. and Schwarz, Uli and Gmeinwieser, N. and Wegscheider, Werner (2002) Degradation Analysis of InGaN Laser Diodes. phys. stat. sol. (a) 194, p. 419.